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Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

Shoubin Xue; Huizhao Zhuang; Baoli Li; Lijun Hu; Shiying Zhang; Chengshan Xue
  • 作者Shoubin Xue; Huizhao Zhuang; Baoli Li; Lijun Hu; Shiying Zhang; Chengshan Xue
  • 卷第61卷
  • 期第18期
  • 印刷ISSN0167-577X
  • 文件大小501.79KB
  • 发表时间2007
  • DOI10.1016/j.matlet.2006.12.049
  • 页码3867-3869
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