[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Gate dielectric engineering of sub quarter micron AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high gain characteristics
- 作者Aggarwal, Ruchika; Agrawal, Anju; Gupta, Mridula; Gupta, R.S.
- 文件大小291.64KB
- 发表时间2007
- DOI10.1109/ISDRS.2007.4422371
- 页码1-2
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