[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering

Ota, Hiroyuki; Hirano, Akito; Watanabe, Yukimune; Yasuda, Naoki; Iwamoto, Kunihiko; Akiyama, Koji; Okada, Kenji; Migita, Shinji; Nabatame, Toshihide; Toriumi, Akira

作者Ota, Hiroyuki; Hirano, Akito; Watanabe, Yukimune; Yasuda, Naoki; Iwamoto, Kunihiko; Akiyama, Koji; Okada, Kenji; Migita, Shinji; Nabatame, Toshihide; Toriumi, Akira
文件大小3342.59KB
发表时间2007
DOI10.1109/iedm.2007.4418864
页码65-68

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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering