发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs

Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs

X. Li; H. Zhou; R.J.W. Hill; C.D.W. Wilkinson; I.G. Thayne

作者X. Li; H. Zhou; R.J.W. Hill; C.D.W. Wilkinson; I.G. Thayne
卷第84卷
印刷ISSN0167-9317
文件大小658.55KB
发表时间2007
DOI10.1016/j.mee.2007.01.045
页码1124-1127

← 返回【学霸图书馆】主页