![Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates]()
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire SubstratesMakimoto, Toshiki; Yamauchi, Yoshiharu; Kido, Takatoshi; Kumakura, Kazuhide; Taniyasu, Yoshitaka; Kasu, Makoto; Matsumoto, Nobuo · Japanese Journal of Applied Physics · 2005