-doped GaAs structures
- 期刊名称Physical Review B
- 作者Noh, J. P.; Iwasaki, S.; Jung, D. W.; Islam, A. Z. M. Touhidul; Otsuka, N.
- 卷第75卷
- 期第19期
- 印刷ISSN1098-0121
- 电子ISSN1550-235X
- 文件大小223.16KB
- 发表时间2007-5-4
- DOI10.1103/PhysRevB.75.195307
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