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Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping

Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping

Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lee, Yao-Jen

期刊名称Applied Physics Letters
作者Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lee, Yao-Jen
卷第90卷
期第12期
印刷ISSN0003-6951
文件大小441.39KB
发表时间2007
DOI10.1063/1.2715122

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