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[Advanced Microelectronics] Advanced Gate Stacks for High-Mobility Semiconductors Volume 27 || Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

[Advanced Microelectronics] Advanced Gate Stacks for High-Mobility Semiconductors Volume 27 || Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

Dimoulas, Athanasios; Gusev, Evgeni; McIntyre, Paul C.; Heyns, Marc
  • 作者Dimoulas, Athanasios; Gusev, Evgeni; McIntyre, Paul C.; Heyns, Marc
  • 文件大小497.63KB
  • 发表时间2007
  • DOI10.1007/978-3-540-71491-0_16
  • 页码341-361
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