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Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

Rogdakis, Konstantinos; Bescond, Marc; Bano, Edwige; Zekentes, Konstantinos
  • 期刊名称Nanotechnology
  • 作者Rogdakis, Konstantinos; Bescond, Marc; Bano, Edwige; Zekentes, Konstantinos
  • 卷第18卷
  • 期第47期
  • 印刷ISSN0957-4484
  • 电子ISSN1361-6528
  • 文件大小267.95KB
  • 发表时间2007-11-28
  • DOI10.1088/0957-4484/18/47/475715
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