Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance
Kazuki Nomoto; Tomoyoshi Mishima; Masataka Satoh; Tohru Nakamura
- 作者Kazuki Nomoto; Tomoyoshi Mishima; Masataka Satoh; Tohru Nakamura
- 卷第4卷
- 期第7期
- 印刷ISSN1610-1634
- 电子ISSN1610-1642
- 文件大小275.90KB
- 发表时间2007
- DOI10.1002/pssc.200674778
- 页码2704-2707