Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

• 作者L. Shi; Y. Yuan; X.F. Liang; Y.D. Xia; J. Yin; Z.G. Liu
• 卷第253卷
• 期第7期
• 印刷ISSN0169-4332
• 文件大小444.04KB
• 发表时间2007
• DOI10.1016/j.apsusc.2006.08.006
• 页码3731-3735