发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-kâSiO[sub 2] interface

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-kâSiO[sub 2] interface

Iwamoto, Kunihiko; Kamimuta, Yuuichi; Ogawa, Arito; Watanabe, Yukimune; Migita, Shinji; Mizubayashi, Wataru; Morita, Yukinori; Takahashi, Masashi; Ota, Hiroyuki; Nabatame, Toshihide; Toriumi, Akira

期刊名称Applied Physics Letters
作者Iwamoto, Kunihiko; Kamimuta, Yuuichi; Ogawa, Arito; Watanabe, Yukimune; Migita, Shinji; Mizubayashi, Wataru; Morita, Yukinori; Takahashi, Masashi; Ota, Hiroyuki; Nabatame, Toshihide; Toriumi, Akira
卷第92卷
期第13期
印刷ISSN0003-6951
文件大小329.08KB
发表时间2008
DOI10.1063/1.2904650

← 返回【学霸图书馆】主页