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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

S.-E. Ahn; M.-J. Lee; Y. Park; B. S. Kang; C. B. Lee; K. H. Kim; S. Seo; D.-S. Suh; D.-C. Kim; J. Hur; W. Xianyu; G. Stefanovich; H. Yin; I.-K. Yoo; J.-H. Lee; J.-B. Park; I.-G. Baek; B. H. Park
  • 作者S.-E. Ahn; M.-J. Lee; Y. Park; B. S. Kang; C. B. Lee; K. H. Kim; S. Seo; D.-S. Suh; D.-C. Kim; J. Hur; W. Xianyu; G. Stefanovich; H. Yin; I.-K. Yoo; J.-H. Lee; J.-B. Park; I.-G. Baek; B. H. Park
  • 卷第20卷
  • 期第5期
  • 印刷ISSN0935-9648
  • 电子ISSN1521-4095
  • 文件大小333.22KB
  • 发表时间2008
  • DOI10.1002/adma.200702081
  • 页码924-928
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