[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientations

Motoyuki Sato, ; Yoshihiro Sugita, ; Takayuki Aoyama, ; Yasuo Nara, ; Yuzuru Ohji,

作者Motoyuki Sato, ; Yoshihiro Sugita, ; Takayuki Aoyama, ; Yasuo Nara, ; Yuzuru Ohji,
文件大小377.10KB
发表时间2008
DOI10.1109/VLSIT.2008.4588565
页码64-65

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