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Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature

Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature

Gaurav Shukla; Alika Khare
  • 作者Gaurav Shukla; Alika Khare
  • 卷第255卷
  • 印刷ISSN0169-4332
  • 文件大小1116.08KB
  • 发表时间2008
  • DOI10.1016/j.apsusc.2008.06.190
  • 页码2057-2062
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