Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes

• 作者A. Grekov; Qingchun Zhang; Husna Fatima; Anant Agarwal; T. Sudarshan
• 卷第48卷
• 期第10期
• 印刷ISSN0026-2714
• 文件大小961.37KB
• 发表时间2008
• DOI10.1016/j.microrel.2008.05.001
• 页码1664-1668