[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Cathode electron injection breakdown model and work function dependent TDDB lifetime for high-k / metal gate stack pMOSFETs

Motoyuki Sato, ; Kikuo Yamabe, ; Kenji Shiraishi, ; Seiichi Miyazaki, ; Keisaku Yamada, ; Ryu Hasunuma, ; Takayuki Aoyama, ; Yasuo Nara, ; Yuzuru Ohji,

作者Motoyuki Sato, ; Kikuo Yamabe, ; Kenji Shiraishi, ; Seiichi Miyazaki, ; Keisaku Yamada, ; Ryu Hasunuma, ; Takayuki Aoyama, ; Yasuo Nara, ; Yuzuru Ohji,
文件大小258.46KB
发表时间2008
DOI10.1109/relphy.2008.4558908
页码335-340

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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Cathode electron injection breakdown model and work function dependent TDDB lifetime for high-k / metal gate stack pMOSFETs