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In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor" onerror="this.onerror=null;window.coverFallback&&coverFallback(this);">

Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

E. Toh; G. H. Wang; L. Chan; D. Weeks; M. Bauer; J. Spear; S. G. Thomas; G. Samudra; Y. Yeo

作者E. Toh; G. H. Wang; L. Chan; D. Weeks; M. Bauer; J. Spear; S. G. Thomas; G. Samudra; Y. Yeo
文件大小470.96KB
发表时间2008
DOI10.1109/led.2008.2000611

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Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor