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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - A new physics-based model for TANOS memories program/erase

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - A new physics-based model for TANOS memories program/erase

Mauri, A.; Compagnoni, C. Monzio; Amoroso, S.; Maconi, A.; Cattaneo, F.; Benvenuti, A.; Spinelli, A. S.; Lacaita, A. L.
  • 作者Mauri, A.; Compagnoni, C. Monzio; Amoroso, S.; Maconi, A.; Cattaneo, F.; Benvenuti, A.; Spinelli, A. S.; Lacaita, A. L.
  • 文件大小115.23KB
  • 发表时间2008
  • DOI10.1109/iedm.2008.4796749
  • 页码1-4
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