The effect of surface proximity on electron transport through ultra-shallow -doped layers in silicon
- 作者W.R. Clarke; X.J. Zhou; A. Fuhrer; T.C.G. Reusch; M.Y. Simmons
- 卷第40卷
- 期第5期
- 印刷ISSN1386-9477
- 文件大小262.71KB
- 发表时间2008
- DOI10.1016/j.physe.2007.09.180
- 页码1566-1568
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