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pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues

pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues

A. Hikavyy; N. Bhouri; R. Loo; P. Verheyen; F. Clemente; J. Hopkins; R. Trussell; M. Caymax
  • 作者A. Hikavyy; N. Bhouri; R. Loo; P. Verheyen; F. Clemente; J. Hopkins; R. Trussell; M. Caymax
  • 卷第517卷
  • 期第1期
  • 印刷ISSN0040-6090
  • 文件大小365.37KB
  • 发表时间2008
  • DOI10.1016/j.tsf.2008.08.107
  • 页码113-116
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