Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects
- 作者Hiroyuki Nagasawa; Masayuki Abe; Kuniaki Yagi; Takamitsu Kawahara; Naoki Hatta
- 卷第245卷
- 期第7期
- 印刷ISSN0370-1972
- 电子ISSN1521-3951
- 文件大小1524.67KB
- 发表时间2008
- DOI10.1002/pssb.200844053
- 页码1272-1280
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