A Fully Performance Compatible 45 nm 4-Gigabit Three Dimensional Double-Stacked Multi-Level NAND Flash Memory With Shared Bit-Line Structure

• 作者Ki-Tae Park; Myounggon Kang; Soonwook Hwang; Doogon Kim; Hoosung Cho; Youngwook Jeong; Yong-Il Seo; Jaehoon Jang; Han-Soo Kim; Yeong-Taek Lee; Soon-Moon Jung; Changhyun Kim
• 卷第44卷
• 期第1期
• 印刷ISSN0018-9200
• 电子ISSN1558-173X
• 文件大小2587.73KB
• 发表时间2009
• DOI10.1109/jssc.2008.2006437