Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Dubrovskii, V. G.; Sibirev, N. V.; Cirlin, G. E.; Soshnikov, I. P.; Chen, W. H.; Larde, R.; Cadel, E.; Pareige, P.; Xu, T.; Grandidier, B.; Nys, J.-P.; Stievenard, D.; Moewe, M.; Chuang, L. C.; Chang-Hasnain, C.

期刊名称Physical Review B
作者Dubrovskii, V. G.; Sibirev, N. V.; Cirlin, G. E.; Soshnikov, I. P.; Chen, W. H.; Larde, R.; Cadel, E.; Pareige, P.; Xu, T.; Grandidier, B.; Nys, J.-P.; Stievenard, D.; Moewe, M.; Chuang, L. C.; Chang-Hasnain, C.
卷第79卷
期第20期
印刷ISSN1098-0121
电子ISSN1550-235X
文件大小785.26KB
发表时间2009-5-19
DOI10.1103/PhysRevB.79.205316

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Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires