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Nonvolatile static random access memory based on spin-transistor architecture

Nonvolatile static random access memory based on spin-transistor architecture

Shuto, Yusuke; Yamamoto, Shuu’ichirou; Sugahara, Satoshi
  • 期刊名称Journal of Applied Physics
  • 作者Shuto, Yusuke; Yamamoto, Shuu’ichirou; Sugahara, Satoshi
  • 卷第105卷
  • 期第7期
  • 印刷ISSN0021-8979
  • 文件大小335.46KB
  • 发表时间2009
  • DOI10.1063/1.3076895
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