Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
- 作者J.M.J. Lopes; E. Durğun Özben; M. Roeckerath; U. Littmark; R. Lupták; St. Lenk; M. Luysberg; A. Besmehn; U. Breuer; J. Schubert; S. Mantl
- 卷第86卷
- 印刷ISSN0167-9317
- 文件大小538.29KB
- 发表时间2009
- DOI10.1016/j.mee.2009.03.065
- 页码1646-1649
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