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[IEEE 2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) - Tehran, Iran (2009.12.29-2009.12.31)] 2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) - Analysis of high frequency effects in the intrinsic part of nano-metre scale MOS devices in millimeter wave band

[IEEE 2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) - Tehran, Iran (2009.12.29-2009.12.31)] 2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) - Analysis of high frequency effects in the intrinsic part of nano-metre scale MOS devices in millimeter wave band

Hasani, J. Yavand; Kamarei, M.; Ndagijimana, F.

作者Hasani, J. Yavand; Kamarei, M.; Ndagijimana, F.
文件大小379.76KB
发表时间2009
DOI10.1109/mmwatt.2009.5450462
页码15-20

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