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[IEEE 2009 6th IEEE International Conference on Group IV Photonics (GFP) - San Francisco, CA, USA (2009.09.9-2009.09.11)] 2009 6th IEEE International Conference on Group IV Photonics - Low-dark-current pin photodiodes using as-grown Ge with an i-Si insertion layer: Mechanism of dark current suppression

[IEEE 2009 6th IEEE International Conference on Group IV Photonics (GFP) - San Francisco, CA, USA (2009.09.9-2009.09.11)] 2009 6th IEEE International Conference on Group IV Photonics - Low-dark-current pin photodiodes using as-grown Ge with an i-Si insertion layer: Mechanism of dark current suppression

Ishikawa, Yasuhiko; Park, Sungbong; Osaka, Jiro; Wada, Kazumi
  • 作者Ishikawa, Yasuhiko; Park, Sungbong; Osaka, Jiro; Wada, Kazumi
  • 文件大小613.52KB
  • 发表时间2009
  • DOI10.1109/group4.2009.5338303
  • 页码22-24
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