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[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

Djezzar, Boualem; Tahi, Hakim

作者Djezzar, Boualem; Tahi, Hakim
文件大小374.76KB
发表时间2009
DOI10.1109/radecs.2009.5994552
页码54-60

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