[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI
Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel
- 作者Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel
- 文件大小633.17KB
- 发表时间2009
- DOI10.1109/rtp.2009.5373435
- 页码1-5