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Atomic mechanism of flat-band voltage shifts by La[sub 2]O[sub 3] and Al[sub 2]O[sub 3] in gate stacks

Atomic mechanism of flat-band voltage shifts by La[sub 2]O[sub 3] and Al[sub 2]O[sub 3] in gate stacks

Lin, L.; Robertson, J.

期刊名称Applied Physics Letters
作者Lin, L.; Robertson, J.
卷第95卷
期第1期
印刷ISSN0003-6951
文件大小392.03KB
发表时间2009
DOI10.1063/1.3173814

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