Process Optimization for High Temperature SiC Lateral Devices
- 期刊名称Materials Science Forum
- 作者Soueidan, Maher; Lazar, Mihaï; Nguyen, Duy Minh; Tournier, Dominique; Raynaud, Christophe; Planson, Dominique
- 电子ISSN1662-9752
- 文件大小180.65KB
- 发表时间2009
- DOI10.4028/www.scientific.net/MSF.615-617.585
- 页码585-588
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