Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

Merckling, Clement; Penaud, Julien; Bellenger, Florence; Kohen, David; Pourtois, Geoffrey; Brammertz, Guy; Scarrozza, Marco; El Kazzi, Mario; Houssa, Michel; Dekoster, Johan; Caymax, Matty; Meuris, Marc; Heyns, Marc

期刊名称MRS Proceedings
作者Merckling, Clement; Penaud, Julien; Bellenger, Florence; Kohen, David; Pourtois, Geoffrey; Brammertz, Guy; Scarrozza, Marco; El Kazzi, Mario; Houssa, Michel; Dekoster, Johan; Caymax, Matty; Meuris, Marc; Heyns, Marc
卷第1155卷
电子ISSN1946-4274
文件大小1158.99KB
发表时间2009-1
DOI10.1557/PROC-1155-C06-07

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Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures