Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
- 期刊名称Materials Science Forum
- 作者Nomoto, Kazuki; Satoh, Masataka; Nakamura, Tohru
- 电子ISSN1662-9752
- 文件大小433.92KB
- 发表时间2009
- DOI10.4028/www.scientific.net/MSF.600-603.1325
- 页码1325-1328
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