Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
- 期刊名称Japanese Journal of Applied Physics
- 作者Sato, Motoyuki; Nabatame, Toshihide; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru
- 卷第48卷
- 期第5期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小440.88KB
- 发表时间2009-5-20
- DOI10.1143/JJAP.48.05DD01
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