Nitride-based metal–insulator–semiconductor capacitors with liquid-phase deposition oxide and (NH4)2Sxpretreatment prepared on sapphire substrates

C. H. Lan; J. D. Hwang; S. J. Chang; Y. C. Lin; Y. C. Cheng; W. J. Lin; J. C. Lin; K. J. Chang

作者C. H. Lan; J. D. Hwang; S. J. Chang; Y. C. Lin; Y. C. Cheng; W. J. Lin; J. C. Lin; K. J. Chang
文件大小482.87KB
发表时间2009
DOI10.1088/0268-1242/24/7/075026

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