![[IEEE Proceedings of the 2002 14th International Conference on Ion Implantation Technology - Taos, New Mexico, USA (2002.9.22-2002.9.27)] Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on - The effect of sub-1000&amp;deg;C source/drain anneal temperature on transistor in conventional SiO<sub>2</sub> integration and high-k dielectric integration]()
[IEEE Proceedings of the 2002 14th International Conference on Ion Implantation Technology - Taos, New Mexico, USA (2002.9.22-2002.9.27)] Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on - The effect of sub-1000&amp;deg;C source/drain anneal temperature on transistor in conventional SiO<sub>2</sub> integration and high-k dielectric integrationJae Eun Lim, Jae Eun Lim; Yudong Kim, Yudong Kim; Torres, K.; Bersuker, G.; Brown, G.; Bennett, J.; Foran, B.; Larson, L. · 2002