Thermal annealing of porous silicon to develop a quasi monocrystalline structure
- 作者M. Banerjee; E. Bontempi; S. Bhattacharya; S. Maji; S. Basu; H. Saha
- 卷第20卷
- 期第4期
- 印刷ISSN0957-4522
- 电子ISSN1573-482X
- 文件大小694.56KB
- 发表时间2009-04
- DOI10.1007/s10854-008-9725-y
- 页码305-311
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