An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass

• 作者Yu Yuan; Bo Yu; Jooyoung Song; Yuan Taur
• 卷第53卷
• 期第2期
• 印刷ISSN0038-1101
• 文件大小549.57KB
• 发表时间2009
• DOI10.1016/j.sse.2008.10.010
• 页码140-144