Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

• 作者N. I. Anisimova; V. A. Bordovsky; G. I. Grabko; R. A. Castro
• 卷第44卷
• 期第8期
• 印刷ISSN1063-7826
• 电子ISSN1090-6479
• 文件大小205.32KB
• 发表时间2010-08
• DOI10.1134/s1063782610080075
• 页码1004-1007