[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - High density 3D integration using CMOS foundry technologies for 28 nm node and beyond

Lin, J.C.; Chiou, W.C.; Yang, K.F; Chang, H.B.; Lin, Y.C.; Liao, E.B.; Hung, J.P.; Lin, Y.L.; Tsai, P.H.; Shih, Y.C.; Wu, T.J.; Wu, W.J.; Tsai, F.W.; Huang, Y.H.; Wang, T.Y.; Yu, C.L.; Chang, C.H.; Chen, M.F.; Hou, S.Y.; Tung, C. H.; Jeng, S.P.; Yu, Doug C.H.

作者Lin, J.C.; Chiou, W.C.; Yang, K.F; Chang, H.B.; Lin, Y.C.; Liao, E.B.; Hung, J.P.; Lin, Y.L.; Tsai, P.H.; Shih, Y.C.; Wu, T.J.; Wu, W.J.; Tsai, F.W.; Huang, Y.H.; Wang, T.Y.; Yu, C.L.; Chang, C.H.; Chen, M.F.; Hou, S.Y.; Tung, C. H.; Jeng, S.P.; Yu, Doug C.H.
文件大小2066.08KB
发表时间2010
DOI10.1109/iedm.2010.5703277

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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - High density 3D integration using CMOS foundry technologies for 28 nm node and beyond