Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al ₂ O ₃ Gate Dielectric

• 期刊名称Chinese Physics Letters
• 作者Mao, Wei; Zhang, Jin-Cheng; Xue, Jun-Shuai; Hao, Yao; Ma, Xiao-Hua; Wang, Chong; Liu, Hong-Xia; Xu, Sheng-Rui; Yang, Lin-An; Bi, Zhi-Wei; Liang, Xiao-Zhen; Zhang, Jin-Feng; Kuang, Xian-Wei
• 卷第27卷
• 期第12期
• 印刷ISSN0256-307X
• 电子ISSN1741-3540
• 文件大小968.40KB
• 发表时间2010-12
• DOI10.1088/0256-307X/27/12/128501