Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
- 期刊名称Semiconductor Science and Technology
- 作者Chine, Z; Fitouri, H; Zaied, I; Rebey, A; El Jani, B
- 卷第25卷
- 期第6期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小362.82KB
- 发表时间2010-06-01
- DOI10.1088/0268-1242/25/6/065009
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