![Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation]()
Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range OperationLin, Y. H.; Lin, Y. Y.; Lee, F. M.; Ho, Y. H.; Hsu, K. C.; Lee, M. H.; Lee, D. Y.; Chiang, K. H.; Yang, C. C.; Li, C. H.; Wu, S. W.; Lei, C. Y.; Lin, C. M.; Chen, C. J.; Chen, K. H.; Lung, H. L.; Wang, K. C.; Tseng, T. Y.; Lu, C. Y. · IEEE Electron Device Letters · 2017