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Low-temperature-processed (<100 °C) organic thin-film transistor using hollow-cathode CVD SiO
              <sub/>2</sub>
              as the gate insulator

Low-temperature-processed (<100 °C) organic thin-film transistor using hollow-cathode CVD SiO 2 as the gate insulator

Fan, Ching-Lin; Chiu, Ping-Cheng; Yang, Yan-Hang; Lin, Chang-Chih
  • 期刊名称Semiconductor Science and Technology
  • 作者Fan, Ching-Lin; Chiu, Ping-Cheng; Yang, Yan-Hang; Lin, Chang-Chih
  • 卷第25卷
  • 期第7期
  • 印刷ISSN0268-1242
  • 电子ISSN1361-6641
  • 文件大小614.23KB
  • 发表时间2010-07-01
  • DOI10.1088/0268-1242/25/7/075006
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