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[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - Design impacts on NAND Flash memory core circuits with vertical MOSFETs

[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - Design impacts on NAND Flash memory core circuits with vertical MOSFETs

Sakui, Koji; Endoh, Tetsuo

作者Sakui, Koji; Endoh, Tetsuo
文件大小792.03KB
发表时间2010
DOI10.1109/imw.2010.5488310
页码1-4

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