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Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

Cong, G. W.; Akimoto, R.; Gozu, S.; Mozume, T.; Hasama, T.; Ishikawa, H.
  • 期刊名称Applied Physics Letters
  • 作者Cong, G. W.; Akimoto, R.; Gozu, S.; Mozume, T.; Hasama, T.; Ishikawa, H.
  • 卷第96卷
  • 期第10期
  • 印刷ISSN0003-6951
  • 文件大小698.20KB
  • 发表时间2010
  • DOI10.1063/1.3357433
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