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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Chemical Vapor Deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Chemical Vapor Deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

Sammak, Amir; Qi, Lin; de Boer, Wiebe B.; Nanver, Lis K.
  • 作者Sammak, Amir; Qi, Lin; de Boer, Wiebe B.; Nanver, Lis K.
  • 文件大小542.89KB
  • 发表时间2010
  • DOI10.1109/icsict.2010.5667503
  • 页码969-971
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