Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications
Albo, Asaf; Cytermann, Catherine; Bahir, Gad; Fekete, Dan
- 期刊名称Applied Physics Letters
- 作者Albo, Asaf; Cytermann, Catherine; Bahir, Gad; Fekete, Dan
- 卷第96卷
- 期第14期
- 印刷ISSN0003-6951
- 文件大小309.17KB
- 发表时间2010
- DOI10.1063/1.3360216