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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Stress induced leakage current under NBT Stress in p-MOSFETs fabricated with 65nm technologies

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Stress induced leakage current under NBT Stress in p-MOSFETs fabricated with 65nm technologies

Chen, Z.; Ji, X.; Yan, F.; Shi, Y.; Zhang, D.; Guo, Q.
  • 作者Chen, Z.; Ji, X.; Yan, F.; Shi, Y.; Zhang, D.; Guo, Q.
  • 文件大小321.40KB
  • 发表时间2010
  • DOI10.1109/icsict.2010.5667303
  • 页码1698-1700
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